| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate capable of canceling a decrease in the yields of an element caused by the occurrence of voids on a junction interface by preventing the junction interface from remaining at the side of the semiconductor substrate when manufacturing the semiconductor substrate having a DSB structure by bonding two wafers, and to provide the semiconductor substrate. SOLUTION: The method includes: a step of forming an amorphous semiconductor layer 120 on the surface of a first semiconductor wafer 102; a step of forming a porous semiconductor layer 118 on the surface of a second semiconductor wafer 104; a step of bonding the first and second semiconductor wafers 102, 104 while the amorphous semiconductor layer 120 overlaps with the porous semiconductor layer 118; a heat-treatment step of monocrystallizing the amorphous semiconductor layer 120; and a step of separating a semiconductor substrate 114 formed by a bonding step in the porous semiconductor layer 118. COPYRIGHT: (C)2008,JPO&INPIT
|
