| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that is hard to leave resist residue when a plating resist film for forming a columnar electrode is peeled off, and to provide its manufacturing method. <P>SOLUTION: An upper insulation film 7 with an opening 8 is formed on the upper surface of a protective film 5 formed on a wafer 21. A base metal layer 9 is formed in the opening 8 of the upper insulation film 7 and on the upper surface thereof. Electrolytic plating is applied to form wiring 11 inside the base metal layer 9 in the opening 8 of the upper insulation film 7. A plating resist film 25 for forming a columnar electrode is formed on the upper surface of the base metal layer 9 including the wiring 11. In this state, the upper insulation film 7 and the base metal layer 9 formed on its surface exist among the wiring 11, so that no plating resist film 25 for forming a columnar electrode is inserted into among the wiring 11. Therefore, when the plating resist film 25 is peeled off after the formation of a columnar electrode 12, no resist residue of the plating resist film 25 therefore is left among the wiring 11. <P>COPYRIGHT: (C)2008,JPO&INPIT |
