| 摘要 |
PROBLEM TO BE SOLVED: To provide a flexible wiring substrate, a semiconductor device and a manufacturing method thereof capable of building up reliable fine pitch ILB without altering the existing bonding conditions. SOLUTION: The flexible wiring substrate is provided with an insulating substrate 11, a wiring pattern patterning a conductive layer containing Cu formed on one side of the insulating substrate 11, and a solder resist layer 17 which covers the surface except at least a terminal of the solder resist layers 17. The terminal of the wiring pattern is provided with a tin plated layer 26 on a base wiring layer 21, and a pitch of each of terminal is >20μm and <30μm. The tin plated layer 26 on a terminal of the wiring base layer 21 consists of a diffusion layer 26a in which Cu in the wiring base layer 21 are diffused in the tin plated layer 26, and a pure tin layer 26b, and its total thickness is within 0.26-0.5μm, the thickness of the pure tin layer is 0.08-0.18μm, and does not exceed (0.53-0.846t)μm, when the total thickness is t. COPYRIGHT: (C)2008,JPO&INPIT |
