| 摘要 |
<p>Disclosed is a polycrystalline silicon substrate wherein concentrations of impurities contained therein satisfy the following relations: [B] = 1E16 [atoms/cm<SUP>3</SUP>], and [Cs] = 2E17 [atoms/cm<SUP>3</SUP>] in the region other than 1-cm-wide edge portion of the substrate, when [B] is the boron concentration determined by SIMS and [Cs] is the substitutional carbon concentration determined by FTIR. This polycrystalline silicon substrate is larger in Voc improvement than the conventional ones, while being greatly improved in Jsc. Such a polycrystalline silicon substrate enables to obtain a highly efficient polycrystalline silicon solar cell.</p> |
