发明名称 |
LASER ANNEALING METHOD AND LASER ANNEALING APPARATUS |
摘要 |
The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the.energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array 26 or a light guide 36 and concentrating optical systems 28 and 44 or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate 3 can be enhanced as much, it is possible to improve the processing ability of the laser annealing. |
申请公布号 |
EP1973149(A1) |
申请公布日期 |
2008.09.24 |
申请号 |
EP20060823057 |
申请日期 |
2006.11.07 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO, LTD. |
发明人 |
NISHIDA, KENICHIRO;KAWAKAMI, RYUSUKE;KAWAGUCHI, NORIHITO;MASAKI, MIYUKI |
分类号 |
H01L21/20;H01L21/268;H01L21/336;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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