METHOD OF PLASMA-PROCESSING AND DEVICE FOR PLASMA-PROCESSING

摘要

PROBLEM TO BE SOLVED: To provide a plasma-processing device or a dry-etching method for etching a film structure having steps with high accuracy.

SOLUTION: The plasma-processing device is provided with: a vacuum vessel 107; a lower electrode 113 arranged within a processing chamber in the vacuum vessel with a wafer 112 to be etched mounted on an upper surface of the lower electrode; bias applying units 118 and 120 for providing a high frequency power to produce a bias potential on the lower electrode 113; a gas supply means 111 for feeding a reactive gas into the processing chamber; an electric-field providing means 101 through 103 for providing an electric field to generate a plasma in the processing chamber; and a regulating unit 127 for regulating a distribution of ion energy in the plasma striking on the wafer 112 under the action of the high frequency power.

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