| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of adjusting plasma distribution even if a reaction chamber has a comparatively high pressure inside. <P>SOLUTION: This plasma treatment apparatus 20 is provided with a vacuum tank 21 forming the reaction chamber 21a; a top plate 28 for sealing the upper part of the vacuum chamber 21; a first plasm source (high-frequency coil) 23 disposed around the reaction chamber 21a and connected to a first high-frequency power supply RF1; and a magnetic field forming means (magnetic coil group) 24 for forming a circular magnetic neutral line 25 having a zero magnetic field in the reaction chamber 21a. In this apparatus 20, a second plasm source (RF antenna) 34 connected to a second high-frequency power source RF2 for adjusting the plasma distribution is provided on the top plate 28. By this configuration, even if the reaction chamber 21a has a relatively high pressure, the plasma distribution can be adjusted by the second plasma source 34, and the in-plane uniformity of plasm treatment can be obtained for a substrate 30. <P>COPYRIGHT: (C)2009,JPO&INPIT |
