NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a high-quality nitride semiconductor light-emitting element which has low crystal-defect density in a nitride semiconductor crystal and exhibits high luminance and a high resistance to ESD.

SOLUTION: The nitride semiconductor light-emitting element includes an n-side semiconductor region; an active layer which is formed on the n-side semiconductor region; a p-side semiconductor region which is formed on the active layer; an n-side electrode which is so arranged that it is connected with the n-side semiconductor region; a p-side electrode which is formed on the p-side semiconductor region; and at least one intermediate layer which is formed, in at least one region and is arranged above the n-side electrode. The intermediate layer has a multilayer construction in which three or more layers whose band gaps are different from one another are stacked. The multilayer construction includes a lamination of AlGaN/GaN/InGaN or InGaN/GaN/AlGaN which are stacked sequentially.

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