| 摘要 |
PROBLEM TO BE SOLVED: To carry out a desired circuit connection in a subsequent wiring forming step and enhance a yield of a semiconductor product in such a manner that, even when a finished dimension of a wiring layer or a diffusion layer fluctuates because of exposure variations and etching variations in a production process, a characteristic fluctuation of a transistor because of its fluctuation is corrected or a decrease in an operating allowance of an internal circuit is prevented. SOLUTION: In a step of manufacturing a semiconductor device, the step has a step of selecting a plurality of exposure masks prepared for forming a certain layer and an exposure mask to be used by finished information obtained by measuring the finished dimension actually in a step prior to the step of forming the certain layer. COPYRIGHT: (C)2009,JPO&INPIT |
