| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of preventing errors in software while preventing an increase in an area of formation. SOLUTION: In an SRAM cell array to be formed on a semiconductor layer on an insulating layer, the bodies of an access transistor and a driver transistor of each cell are isolated in units of cells through trench isolation reaching up to the insulating layer (perfect isolation). Also, perfect isolation is formed into a slit in a trench isolation not reaching the insulating layer (partial isolation), and a body contact is formed so as to straddle the slit-like perfect isolation, so that the body contact can be shared between the adjacent cells. COPYRIGHT: (C)2009,JPO&INPIT
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