| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having reduced power consumption. SOLUTION: The semiconductor device 1 includes a first semiconductor element 2 and a second semiconductor element 3. The first semiconductor element 2 has a first source electrode 22, a first drain electrode 23, a first organic semiconductor layer 24, a first gate insulating layer 25 and a first gate electrode 21. The second semiconductor element 3 has a second source electrode 32, a second drain electrode 33, a second organic semiconductor layer 34, a second gate insulating layer 35 and a second gate electrode 31. The second gate insulating layer 35 contains an organic ferroelectric material. COPYRIGHT: (C)2009,JPO&INPIT
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