发明名称 CHARGED PARTICLE BEAM DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a charged particle beam device which prevents the effect of charging on the surface of a sample exposed to a primary charged particle beam when a plurality of frames are integrated to obtain an image of a given area on the sample. SOLUTION: A given area on a sample wafer 78 is scanned with a primary electron beam from an electron gun 70 to generate secondary electrons. As generated secondary electrons are detected by a detector 63, a plurality of frames are generated and integrated to obtain an image of the given area. In generating the plurality of frames, when a judgment is made based on a detection signal from the detector 63 that a volume of charges in the given area has reached a specified value, a neutralizing voltage is applied to a boosting electrode 77 to eliminate or reduce charges before generation of the next frame. Hence the effect of charging is reduced when each frame is generated, so that the S/N of the image obtained by integrating the frames can be improved. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008282630(A) 申请公布日期 2008.11.20
申请号 JP20070124849 申请日期 2007.05.09
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 YANO TASUKU;TEI TOMOKI;FURUKAWA TAKASHI;NASU OSAMU
分类号 H01J37/20;H01J37/22 主分类号 H01J37/20
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