| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving breakdown strength and decreasing a loss (low on-state resistance, a low saturation voltage). SOLUTION: The semiconductor device includes: a first high-resistance base layer 2 of a first conductivity type; a collector layer 14 of a second conductivity type; a second base layer 16 of the second conductivity type; a emitter layer 13 of the first conductivity type; a gate electrode 8 extending in a first direction, the gate electrode 8 being formed via a gate insulating film 6 in a trench that passes through the emitter and second base layers and reaches the halfway depth of the first base layer; a collector electrode 20; and an emitter electrode 24 provided in the emitter and second base layers. The emitter layer includes: a first emitter layer 13-1 arranged along the trench in a first direction; and a second emitter layer 13-2 arranged in a second direction so that the first emitter layers are connected in a ladder. A base contact layer 4, which has impurity density higher than that of the second base layer of the secondconductivitytype, is arranged while a second emitter layer is enclosed. COPYRIGHT: (C)2009,JPO&INPIT |
