| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including interlayer conductive contacts and its forming method. SOLUTION: The semiconductor device comprises: a first interlayer insulating film which is arranged on an underlying contact region of the semiconductor device and has an upper surface; first conductive patterns 113a, 113b which are arranged within first openings 110a, 110b which pass through the first interlayer insulating film and have an upper part of a first width W1a; and second conductive patterns 125a, 125b which are contacted with the upper surface of the first conductive patterns 113a, 113b and have a lower part of a second width W2a which is narrower than the first width W1a. The upper surface of the first conductive patterns 113a, 113b is relatively recessed with respect to the upper surface of the first interlayer insulating film. The relative height of the upper surface of the first conductive patterns 113a, 113b with respect to the underlying contact region is shorter than the relative height of the upper surface of the first interlayer insulating film with respect to the underlying contact region. The second conductive patterns 125a, 125b are connected to the upper surface of the first conductive patterns 113a, 113b. The lower part of the second conductive patterns has the second width which is narrower than the first width. COPYRIGHT: (C)2009,JPO&INPIT |
