| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a multi-beam semiconductor laser element in which a variation of an angle of polarization is small. <P>SOLUTION: This semiconductor laser element has: an n type semiconductor substrate; an n type clad layer, an active layer, a p type clad layer and a contact layer which are laminated on a first face of the substrate; a plurality of division grooves which extend from one end to another end of the substrate and are formed in a given depth of the p type clad layer from the contact layer; a stripe-shaped ridge which is formed in each division portion sandwiched between the adjacent division grooves and sandwiched between two separate grooves which extend from one end to another end of the substrate and are formed in a given depth of the p type clad layer from the contact layer; an insulating layer covering a portion from both side faces of the contact layer of each ridge to an end of the division portion beyond the separate grooves; a first electrode formed on a second face of the substrate; and a second electrode formed ranging over the ridges, the separate grooves and a multilayer semiconductor layer outside of the separate grooves in each division portion. The second electrode comprises the second electrode layer of a lower layer and a second plating layer of an upper layer, and the second plating layer has an arcuate section in which a portion corresponding to the ridge portion is the thickest and its thickness reduces toward the division grooves gradually. <P>COPYRIGHT: (C)2009,JPO&INPIT |
