发明名称 SWITCH SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a switch semiconductor integrated device for changing step-up scaling factor in a boosting circuit depending on a use state of the circuit and reducing a consumption current. <P>SOLUTION: In a charge pump circuit 12, first to fourth depression type FETs 31 to 34, being charging and discharging field-effect transistors, can be on-off-controlled by boosting control signals Vcp1, Vcp2 output from a logic circuit 2. By selecting accordingly on-off states of the first to fourth depression type FETs 31 to 34, charging or discharging operations of first to fourth charging and discharging capacitors 5 to 8 can be selected. As a result, the step-up scaling factor can be changed. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008294649(A) 申请公布日期 2008.12.04
申请号 JP20070136801 申请日期 2007.05.23
申请人 NEW JAPAN RADIO CO LTD 发明人 HINO TAKASHI
分类号 H04B1/44;H03K17/06 主分类号 H04B1/44
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