| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon single-crystal wafer that effectively exhibits gettering effect even on a thin film device. SOLUTION: The silicon wafer is obtained by processing single crystal grown by a Czochralski method, a rapid temperature rising/falling heat treatment of≤10 seconds is applied to the wafer having an initial interstitial oxygen concentration of≥1.4×10<SP>18</SP>atoms/cc (ASTM F-121, 1979). COPYRIGHT: (C)2009,JPO&INPIT
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