| 摘要 |
PROBLEM TO BE SOLVED: To provide an art whereby a semiconductor device for mounting on a single substrate multiple kinds of memories having different memory functions is manufactured without altering largely the manufacturing processes of an MONOS-type nonvolatile memory, so as to provide a semiconductor device with multiple functions. SOLUTION: In the manufacturing method of a semiconductor device, a selecting gate electrode 4m of the selecting nMIS of a MONOS cell, a gate electrode 4d of the selecting nMIS of a DRAM cell, and a floating gate electrode 4f of the memory MIS of a FLASH cell are formed out of a first conductor film. Further, a memory gate electrode MG of the memory MIS of the MONOS cell, a capacitor electrode 11d of the DRAM cell, and a control gate electrode 11f of the memory MIS of the FLASH cell are formed out of a second conductor film. Moreover, a charge holding insulation film of the MONOS cell, a capacitor insulation film of the DRAM cell, and an interlayer insulation film of the FLASH cell are formed out of a lamination film comprising an insulation film 10b, a charge accumulating layer CSL, and an insulation film 10t. Thereby, the semiconductor device for mounting on a semiconductor substrate 1 the MONOS cell, the DRAM cell, and the FLASH cell is manufactured. COPYRIGHT: (C)2009,JPO&INPIT
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