| 摘要 |
PROBLEM TO BE SOLVED: To improve further the stability of data holding in a memory cell. SOLUTION: The semiconductor storage device includes: a memory cell array 11 having a plurality of memory cells MC; first and second word lines RWL, WWL arranged in common to the plurality of memory cells MC; a plurality of power source lines VSSR arranged corresponding to the plurality of memory cells; a plurality of couples of first and second bit lines arranged corresponding to the plurality of memory cells MC; a row decoder 12 for successively activating the first word line PWL and second word line WWL at the write-in of data; and a control circuit 14 for setting the power source line VSSR of a selected memory cell to the floating state and setting the power source line VSSR of a non-selected memory cell to a grounding voltage, at the time of write-in of data. COPYRIGHT: (C)2009,JPO&INPIT
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