发明名称 HYDROGEN SENSOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a hydrogen sensor in which hydrogen gas detection sensitivity is hard to degrade. <P>SOLUTION: The hydrogen sensor is characterized in that: a thin film layer is formed on the surface of substrate; a buffer layer is formed on the surface of the thin film layer; a catalyst layer which changes an optical reflectivity of the thin film layer by hydrogenating the catalyst when contacting hydrogen gas is formed on the surface of the buffer layer; and in this hydrogen sensor, an oxygenation of the catalyst layer can be prevented with components diffused into the catalyst layer from the thin film layer (for example, magnesium) bound with components diffused into the catalyst layer from the buffer layer (for example, titanium). As a result, the oxidation of the catalyst layer or the like generated in connection with the repetition of the hydrogenation can be prevented, and the hydrogen gas detection sensitivity of the hydrogen sensor becomes hard to degrade. When the thin film active layer is formed in at least one side space between the substrate and the thin film layer, and between the buffer layer and the thin film layer, or in spaces of both of them, hydrogen gas detection sensitivity degradation by the buffer layer is compensated in such a way that components diffused into the thin film layer from the thin film active layer (for example, palladium) promotes the hydrogenation of the thin film layer. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008298724(A) 申请公布日期 2008.12.11
申请号 JP20070148001 申请日期 2007.06.04
申请人 ATSUMI TEC:KK;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 UCHIYAMA NAOKI;YOSHIMURA KAZUNORI
分类号 G01N31/00;G01N21/78;G01N31/10;G01N31/22 主分类号 G01N31/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利