发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS
摘要 PROBLEM TO BE SOLVED: To improve a power source noise reduction effect by a decoupling capacitor without increasing a chip area. SOLUTION: A semiconductor integrated circuit apparatus has a plurality of unit cells 1 provided on a semiconductor substrate, and a wiring layer supplying a power source to the plurality of unit cells. The wiring layer has ground potential wirings 3 and 4 applying a ground potential to each of the plurality of unit cells, power source potential wirings 2 and 5 applying a power source potential to each of the plurality of unit cells, and an insulating film provided between the ground potential wirings 3 and 4 and the power source potential wirings 2 and 5. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008300765(A) 申请公布日期 2008.12.11
申请号 JP20070147925 申请日期 2007.06.04
申请人 TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP 发明人 MATSUMOTO SHUJI
分类号 H01L21/82;H01L21/3205;H01L21/822;H01L23/52;H01L27/04 主分类号 H01L21/82
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