| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for which the covering property of an insulating layer at a through-hole bottom part is improved and the decline of electric insulation and connection defects are improved in the through wiring part of a semiconductor substrate. SOLUTION: On the surface of the semiconductor substrate 2 having a through-hole 3, a first insulating layer 4 having the opening 4a of the same diameter as the through-hole 3 is put, and a first wiring layer 5 is formed on it covering the opening 4a. Also, a second insulating layer 6 is put inside the through-hole 3 and on the back surface of the semiconductor substrate 2. The second insulating layer 6 is formed so as to be inscribed in the first wiring layer 5 and has the opening 6a of a diameter smaller than the opening 4a of the first insulating layer 4 in the inscribed part. Further, a second wiring layer 7 is filled and formed inside the through-hole 3, and the second wiring layer 7 is inscribed in the first wiring layer 5 through the opening 6a of the second insulating layer 6. COPYRIGHT: (C)2009,JPO&INPIT
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