| 摘要 |
PROBLEM TO BE SOLVED: To improve the image quality of an imaging apparatus by introducing impurities into the boundary part of a pixel part with an element isolation insulating film and thereby suppressing the occurrence of dark voltage and white flaws. SOLUTION: After etching of a trench groove 1a, a solid diffusion source film 5 including boron is formed in the trench groove 1a instead of the conventional implantation of tilt ion. Before heat treatment to diffuse P-type impurities included in the solid diffusion source film 5 formed in the trench groove 1a to a silicon substrate side (sidewall and bottom in the trench groove 1a) by heat treatment, a photo resist is formed in which the formation part of N-well 8 is opened and implantation of ion is carried out, and thus, an N-well region 8 is formed, and using the same photo resist, the solid diffusion source film 5 is removed by etching, such as wet etching, and only the solid diffusion source film 5 on a P-well region 7 side is left. By the subsequent heat treatment, the P-type impurities are introduced from the solid diffusion source film 5 at the boundary part of the pixel part with an element isolation insulating film 9. COPYRIGHT: (C)2009,JPO&INPIT
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