| 摘要 |
PROBLEM TO BE SOLVED: To increase a current on/off ratio without using a complicated process in a vertical organic thin-film transistor capable of high-speed operation. SOLUTION: This organic thin-film transistor has a structure in which a first electrode (source or drain) 12, a first organic semiconductor layer 15, a third electrode (gate) 14, a second organic semiconductor layer 16 and a second electrode (drain or source) 13 are stacked in this order on a substrate 11. The third electrode has a film thickness of≥80 nm. The film thickness of the third electrode is made large, so that the organic thin-film transistor having a large on/off-ratio can be obtained. COPYRIGHT: (C)2009,JPO&INPIT
|
