POLYMER FOR SPIN ON CARBON HARDMASK AND PREPARATION METHOD THEREOF, SPIN ON CARBON HARDMASK COMPOSITION CONTAINING THE POLYMER AND PATTERNING METHOD OF SEMICONDUCTOR DEVICE USING THE COMPOSITION

摘要

A spin-on hard mask condensation polymer, a spin-on carbon hard mask composition containing the condensation polymer, a method for forming the spin-on carbon hard mask by using the composition, and a method for forming a semiconductor device pattern are provided to absorb the reflected light generated during the exposure and to reduce processing time and cost. A spin-on hard mask condensation polymer is represented by the formula 1 and has a weight average molecular weight of 500-20,000, wherein R is a naphthalene derivative or an anthracene derivative; and n is 1-600. A spin-on carbon hard mask composition contains 0.1-40 wt% of the condensation polymer; and optionally a curing agent, a thermal acid generator and a solvent.