| 摘要 |
<p>A semiconductor device and manufacturing method thereof is provided to secure the performance characteristic including the entry property of each memory cell etc. and fine each memory cell and highly integrate each memory. A semiconductor device comprises a semiconductor substrate(1), a memory cell and a peripheral circuit(7). The memory cell and peripheral circuit are formed on the semiconductor substrate. The memory cell has a first insulating layer(2), a first electrode layer, a second insulating layer(8) and a second electrode layer which are successively formed on the semiconductor substrate. The peripheral circuit comprises the first insulating layer, the first electrode layer, and the second insulating layer and the second electrode layer. The second insulating layer has an opening part for the peripheral circuit. The second electrode layer is electrically connected with the first electrode layer through the opening for the peripheral circuit. The film thickness of the first electrode layer under the second insulating layer of the peripheral circuit is thicker than the film thickness of the first electrode layer of the memory cell.</p> |
