METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH DUAL METAL GATE

摘要

A manufacturing method of the semiconductor device having dual metal-gate is provided to form the metal gate having the different work function using the surface energy state difference of substrate. A manufacturing method of the semiconductor device having the dual metal-gate comprises the following steps: the step for forming the gate insulating layer(23) on the substrate(21); the step for forming the first metal layer(25) in the first area on the gate insulating layer; the step for forming second metal layer on the overall structure including first metal layer; the step for planarizing the second metal layer so that it become the same thickness as the first metal layer and leaving behind in the second part; the step for forming the insulating layer on the first and the second metal layer of the first and the second area; the step for patterning the insulating layer and the first and the second metal layer.