SUBSTRATE STRUCTURE WITH A BUFFER LAYER ON MICA SUBSTRATE FOR APPLICATION TO FLEXIBLE POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS, AND ITS FABRICATION METHOD

摘要

A substrate composite for the flexible polycrystalline silicon thin film element fabrication and a manufacturing method thereof are provided to increase the quality of the polycrystalline silicon thin film by using the mica substrate having the high heat resistance of 600‹C as a substrate. The buffer layer is formed on the mica substrate(10) of the heat resistance for improving the stability of the electric component manufacture. The buffer layer on the mica substrate has the structure of monolayer or the multi-layered type. The buffer layer on the mica substrate performs the duty as a protective layer, an adhesive layer or a shield layer. The adhesive layer is formed of the titanium, the titanium mixture or the titanium composition. The protective layer is formed of the tantalum, the tantalum mixture or the tantalum composition.