Disclosed is a magnetic material comprising a crystal of µ-Ga x Fe 2-x O 3 (wherein 0 < x < 1) prepared by substituting a part of Ga 3+ ion sites of an µ-Fe 2 O 3 crystal with Ga 3+ ions and having X-ray diffraction peaks corresponding to the crystal structure of µ-Fe 2 O 3 . The coercive force of the magnetic material lowers in accordance with the Ga content thereof, and the saturation magnetization thereof has a maximum value.
申请公布号
EP2003094(A2)
申请公布日期
2008.12.17
申请号
EP20070740945
申请日期
2007.03.28
申请人
THE UNIVERSITY OF TOKYO;DOWA ELECTRONICS MATERIALS CO., LTD.