发明名称 METHOD FOR REPAIRING OF PHOTOLITHOGRAPHY MASK AND PRECURSOR FOR THE SAME
摘要 <p>A repairing method of a photolithography mask and a precursor for the same are provided to repair the white defect without lowering the transmittance of mask and the damage of the substrate. A repairing method of a photolithography mask comprises the following steps: the step for providing the mask including the patterned portion having the white defect(300); the step for spraying the metal precursor(500) around the white defect; the step for forming the metal layer at the part where the white defect is located by irradiating the electron beam to the metal precursor. The metal precursor is made of the thermal agitation and the ligand covalent-bonding with the thermal agitation surrounding. The ligand is made of one or more first ligand species and one or more second ligand species different from the first ligand species.</p>
申请公布号 KR20080109231(A) 申请公布日期 2008.12.17
申请号 KR20070057302 申请日期 2007.06.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, DONG HUN;KIM, GEUN BAE;CHI, SUNG HON
分类号 H01L21/027 主分类号 H01L21/027
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