发明名称 GROWTH METHOD FOR ZINC OXIDE USING PLATINUM AS A SUBSTRATE AND DEVICE MANUFACTURING METHOD USING THE SAME
摘要 A growth method for zinc oxide using platinum as a substrate and a device manufacturing method using the same are provided to effectively grow the monocrystalline zinc oxide of high quality. The growth process of the zinc oxide comprises the following steps: the step for forming the platinum substrate by growing the platinum layer on the substrate; the step for growing the zinc oxide by depositing the thin film in which the zinc oxide is included on the platinum substrate. The forming method of platinum layer includes the step for forming the titanium(Ti), the oxide titanium(TiO2), and the oxidation silicon(SiO2) as the buffer layer on the substrate; the step for growing the platinum substrate to have the orientation.
申请公布号 KR20080109420(A) 申请公布日期 2008.12.17
申请号 KR20070057723 申请日期 2007.06.13
申请人 INDUSTRY-ACADEMY COOPERATION CORPS OF SUNCHON NATIONAL UNIVERSITY 发明人 LEE, JI MYUN;JIN, YONG CHOOL;KIM, HAN KI
分类号 H01L21/20 主分类号 H01L21/20
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