发明名称 |
METHOD OF FORMING AN IN-SITU RECESSED STRUCTURE |
摘要 |
The present invention features a method of patterning a substrate that includes forming, on the substrate, a multi-layer film with a surface, an etch rate interface and an etch-differential interface. The etch-differential interface is defined between the etch rate interface and the surface. A recorded pattern is transferred onto the substrate defined, in part, by the etch-differential interface. The recorded pattern has etched pattern characteristics (EPC) that define the shape of the pattern formed for a given etch process or set of etch processes. The etch-differential interface modifies the EPC. By establishing a suitable etch-differential interface, one may obtain a recorded pattern that differs substantially in shape compared with the shape of the patterned layer or the same pattern may be obtained. |
申请公布号 |
EP1794099(A4) |
申请公布日期 |
2008.12.17 |
申请号 |
EP20050796480 |
申请日期 |
2005.09.12 |
申请人 |
MOLECULAR IMPRINTS, INC. |
发明人 |
SREENIVASAN, SIDLGATA V.;MILLER, MICHAEL N.;STACEY, NICHOLAS A.;WANG, DAVID C. |
分类号 |
H01L21/308;H01L21/311;H01L21/768 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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