SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

A semiconductor device and a method of formation thereof are provided to reduce the electrostatic capacity between the metal wirings by reducing the resistance of metal wiring. A semiconductor device comprises the interlayer insulating films(110,120), the conductive patterns(112,126), and the capping layer(128). The interlayer insulating film comprises the trench(122) on the semiconductor substrate(100). The conductive pattern is located in the trench and distanced from both side wall of the trench. The capping layer is arranged on the side wall and upper side of the conductive pattern. The capping layer defines the air gap between the interlayer insulating film and the conductive pattern. The conductive pattern is formed of Cu. The capping layer is formed of Co.