| 摘要 |
It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an epitaxial crystal while a dopant is added to a compound semiconductor substrate, comprises: obtaining a relation between an off angle and a doping efficiency with regards to the same type of compound semiconductor substrate in advance; and setting a doping condition for carrying out an epitaxial growth on the compound semiconductor substrate based on the obtained relation and a value of the off angle of the subtrate.
|
