| 摘要 |
A manufacturing method of the semiconductor device including the cylinder shape capacitor is provided to minimize the element failure and prevent the leaning phenomenon of the storage electrode and the bridge phenomenon of the storage electrode by performing the storage node insulating layer removal process firstly. A manufacturing method of the semiconductor device including the cylinder shape capacitor comprises the following steps: the step for successively forming the etch stopping layer(21) and the storage node insulating layer on the substrate(20) having the first area in which the capacitor is formed and the second part of the besides; the step for forming the storage-electrode region which exposes the part of substrate by etching selectively the storage node insulating layer of the first area and the etch stop layer; the step for forming the conduction film(26) for the storage electrode on the front side of the outcome of the second part; the step for selectively removing the conduction film for the storage electrode of the second part; the step for removing the storage node insulating layer of the second part and the first area by using the wet chemical; the step for separating the node of the conduction film for the storage electrode of the first area.
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