| 摘要 |
A ferroelectric material and the ferroelectric layer formation method using the same are provided to implement the ferroelectric material possible for forming at the temperature of 200‹C or less with excellent ferroelectric property. A ferroelectric material is comprised of the mixture of the organic compound and the inorganic material ferroelectric material. The inorganic material ferroelectric material includes at least one of the oxide ferroelectric, fluoride ferroelectric, and the mixture of the ferroelectric semiconductor or these inorganic materials. The inorganic material ferroelectric material has the hysteresis characteristic according to the change of the applied voltage. The silicide, silicate or another metal is added to the ferroelectric material.
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