发明名称 |
Fabricating method for thin film transistor substrate and thin film transistor substrate using the same |
摘要 |
A thin film transistor substrate and its fabrication method are discussed. According to an embodiment, the fabricating method of a thin film transistor substrate includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode, the gate insulating film having a groove in an area corresponding to an area where an active layer of a thin film transistor is to be formed; forming the active layer of the thin film transistor by use of a nanowire in the groove of the gate insulating film; and forming a source electrode and a drain electrode on the active layer.
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申请公布号 |
US7465612(B2) |
申请公布日期 |
2008.12.16 |
申请号 |
US20050312605 |
申请日期 |
2005.12.21 |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
CHAE GEE SUNG;PARK MI KYUNG |
分类号 |
H01L21/00;H01L21/20;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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