SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME, METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING IMAGE SENSOR

摘要

A semiconductor substrate and a manufacturing method thereof, and a manufacturing method of the semiconductor device and a manufacturing method of the image sensor are provided to improve the productivity by effectively removing the sub substrate. A semiconductor substrate comprises the substrate(120) and the semiconductor layer(140). The substrate is formed at the lower region and on the lower region. The substrate comprises the trench(122) domain in which a plurality of trenches are formed. The semiconductor layer is formed on the substrate. A plurality of trenches are formed on the front side of the substrate. The depth of a plurality of trenches is materially same. The plurality of trenches are buried by burying layer.