发明名称 SEMICONDUCTOR PACKAGE MODULE USING ANODIZED OXIDE LAYER AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor package module and a manufacturing method thereof are provided to effectively connect the semiconductor device, the optical device, and the circuitry by extending and forming the lead line up to girth of the organic insulating layer or the oxide layer. A semiconductor device module using the anodized film comprises the substrate(10), the oxide layer(12), the semiconductor device(16), the organic layer, and the lead line(26). The substrate is formed of the material forming the anodized film. The oxide layer is formed on the top of the substrate. The oxide layer has one or more opening(14). The semiconductor device is mounted in the opening of the oxide layer. The organic layer is formed in order to cover the oxide layer and the semiconductor device. The lead line is formed on the organic layer or the oxide layer. The lead line is connected to the semiconductor device.
申请公布号 KR20080108885(A) 申请公布日期 2008.12.16
申请号 KR20070094584 申请日期 2007.09.18
申请人 WAVENICS, INC.;KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 KWON, YOUNG SE;KIM, KYOUNG MIN
分类号 H01L23/12 主分类号 H01L23/12
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