发明名称 IGBT-Driver circuit for desaturated turn-off with high desaturation level
摘要 A driver circuit comprising an insulated gate bipolar transistor having a collector coupled to a voltage supply, an emitter coupled to a source of reference potential, and a gate configured to receive a control signal from a driver circuit, and a desaturation circuit conductively coupled between an insulated gate and a collector of the insulated gate bipolar transistor to desaturate the insulated gate. The desaturation circuit includes a series coupled bias voltage source, uni-directionally conducting element and switch.
申请公布号 US7466185(B2) 申请公布日期 2008.12.16
申请号 US20060552038 申请日期 2006.10.23
申请人 INFINEON TECHNOLOGIES AG 发明人 BAYERER REINHOLD
分类号 H03K17/16 主分类号 H03K17/16
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