| 摘要 |
A wafer level package of the silicon image sensor and a manufacturing method thereof are provided to decrease the thickness of the packaging without using the cover glass for protecting the image sensor. The wafer level chip size package of the silicon image sensor using the through via hole process comprise the image sensor, the electrode pad, the penetrating electrode(171), and the bump(200). The image sensor is formed on the front side of the substrate and converts the light which is income from the outside into the electric signal. The electrode pad is formed in the silicon wafer top of the substrate in order to output the electric signal transformed by the image sensor. The penetrating electrode delivers the electric signal outputted from the electrode pad to the rear side of the substrate. The bump is formed on the penetrating electrode.
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