METHOD OF FORMING CAPACITOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A formation method of capacitor and a manufacturing method of the semiconductor device are provided to form the insulating layer pattern having the step height due to the different etch rate of the insulating layers by performing the wet etching process to the insulating layer pattern in which the insulating layers are repeatedly laminated. A formation method of capacitor comprises the following steps: the step for forming the insulating layer by repeatedly depositing the first insulating layer and the second insulating layer alternately on the substrate(200); the step for forming the back up insulating layer pattern including the first opening exposing the substrate by patterning the insulating layer; the step for forming the groove by etching the second insulating layer; the step for forming the insulating layer pattern including the second opening(264); the step for consecutively forming the top electrode film including the metal inside the second opening and on the insulating layer pattern; the step for consecutively forming the dielectric layer on the top electrode film; the step for consecutively forming the bottom electrode film including metal on the dielectric layer.