发明名称 |
Method of forming a field effect transistor |
摘要 |
In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising semiconductive material. After the etching, insulative material is formed within the opening over the semiconductive material base. The insulative material less than completely fills the opening and has a substantially uniform thickness across the opening. Semiconductive source/drain material is formed within the opening over the insulative material within the opening. A transistor gate is provided operatively proximate the semiconductive source/drain material. Other aspects and implementations are contemplated.
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申请公布号 |
US7465616(B2) |
申请公布日期 |
2008.12.16 |
申请号 |
US20040000809 |
申请日期 |
2004.11.30 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
TANG SANH D.;VIOLETTE MICHAEL P.;BURKE ROBERT |
分类号 |
H01L21/00;G06K19/07;H01L21/336;H01L21/762;H01L21/8234 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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地址 |
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