发明名称 |
Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions |
摘要 |
The present invention relates to a Tunnel Field Effect Transistor (TFET). which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The IFET further includes a silicon germanium alloy epitaxial source region with a conductivity opposite that of the drain.
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申请公布号 |
US7465976(B2) |
申请公布日期 |
2008.12.16 |
申请号 |
US20050129520 |
申请日期 |
2005.05.13 |
申请人 |
INTEL CORPORATION |
发明人 |
KAVALIEROS JACK T.;METZ MATTHEW V.;DEWEY GILBERT;JIN BEN;BRASK JUSTIN K.;DATTA SUMAN;CHAU ROBERT S. |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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