发明名称 Aluminium chemical vapour deposition on silicon
摘要 <p>Aluminium dioxide layer is applied to a silicon body in two stages: (i) heating of the silicon body to a temp. exceeding that at which an organic aluminium compound is thermally decomposed; (ii) organic aluminium compound in vapour form is led, together with a carrying gas, through a blow pipe, the outlet of which is at a short distance of the silicon body so that the vapour of the organic aluminium compound is thermally decomposed in the proximity of the silicon body and the aluminium oxide is deposited on this body.</p>
申请公布号 DE1939592(A1) 申请公布日期 1970.02.26
申请号 DE19691939592 申请日期 1969.08.04
申请人 HITACHI LTD. 发明人 KOZUKA,HIROTSUGU;KOGA,YASUSHI
分类号 C23C16/40;H01L21/316;H01L23/29 主分类号 C23C16/40
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