| 摘要 |
<p>Thick film resistor produced by oxidising reducing and fritting a metal on a substrate. G6A. Before fritting, the layer receives an oxidic compound of a substance with a higher stable state of oxidation so that at least a part of it is converted into a higher oxide and some of the oxygen released by the reduction of the metal oxide is fixed. Both the oxidic compound and the higher oxide is compatible with the vitreous body formed by fritting. The substance contains arsenic, antimony or bismuth and has a trivalent and a pentavalent oxidation state. If it contains As2O3, the fritting temperature is 720 degrees C. Enough As2O3 is added to retain in the fritted element 0.6-1.4 wt.% of arsenic compounds. The metal may be palladium and the reducing material silver.</p> |
