| 摘要 |
A nano wire manufacturing method is provided to grow nano wire more easily, to simplify the process for producing nano wire and to obtain higher electric current driving force by using silicide catalyst. A manufacturing method of nano wire comprises steps of: (S1) forming alloy thin film layer on silicone substrate; (S2) depositing aluminum thin film on the alloy thin film layer; (S3) forming porous nano template by means of the deposited aluminum thin film; (S4) forming titanium pilar under the pores of the template; (S5) precipitating copper from the alloy thin film layer as copper silicide by reaction with silicone which is diffused on aluminum oxidization film after diffusion toward the lower side of the pores of the template through the titanium pilar; (S6) growing nano wire on using the precipitated copper silicide catalyst; and (S7) removing the porous nano template for the preparation of semiconductor device. Further, the alloy thin film layer is one of cupper-titanium alloy, platinum-titanium alloy and cobalt-titanium alloy.
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