| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to obtain high current density in submicron region and to reduce RC delay by using CNT(Carbon NanoTubes). CONSTITUTION: A dual damascene pattern is formed to selectively expose a lower metal interconnection(21). A catalytic metal film(30) is formed on the exposed lower metal interconnection(21) and selectively etched to remain on the dual damascene pattern and the metal interconnection. Then, a carbon nanotube layer(31) is grown on the catalytic metal film(30) to fill the dual damascene pattern.
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