| 摘要 |
<p>Provided is an exposure method wherein patterns for double exposure are illuminated, respectively, on the entire surface under optimum illuminating conditions, and exposure is performed at a high throughput. To transfer the pattern of a reticle (R) on a wafer (W) by a scanning exposure system, first and second pattern regions are formed adjacent to a scanning direction on the reticle (R). When the first and the second pattern regions are passing through within a visual field of a projection optical system (PL) at the same time, a wafer (W) is exposed by illuminating the first pattern region by using a first illuminating slit (10AP) whose width in the scanning direction gradually narrows, under first illuminating conditions, and by illuminating the second pattern region by using a second illuminating slit (10BP) whose width in the scanning direction gradually widens, under first illuminating conditions. ® KIPO & WIPO 2009</p> |
