| 发明名称 |
CURABLE RESIN COMPOSITION WITH EXCELLENT ETCHING RESISTANCE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a polysilsesquioxane improved in ion etching resistance and heat resistance, and a curable resin composition including the polysilsesquioxane. SOLUTION: The silicon compound having aromatic ring and vinyl group is obtained by hydrolyzing a mixture including a silicon compound R<SP>1a</SP>Si(OR<SP>2</SP>)<SB>3</SB>represented by the formula (1a) and one or more silicon compounds selected from the group consisting of a silicon compound R<SP>1b</SP>Si(OR<SP>3</SP>)<SB>3</SB>represented by the formula (1b) and a silicon compound R<SP>1c</SP>R<SP>1d</SP>Si(OR<SP>4</SP>)<SB>2</SB>represented by the formula (c) followed by condensing. COPYRIGHT: (C)2009,JPO&INPIT
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| 申请公布号 |
JP2008297490(A) |
申请公布日期 |
2008.12.11 |
| 申请号 |
JP20070146957 |
申请日期 |
2007.06.01 |
| 申请人 |
SHOWA DENKO KK |
发明人 |
MORINAKA KATSUTOSHI;UCHIDA HIROSHI;FUJITA TOSHIO;HIROSE KATSUMASA |
| 分类号 |
C08G77/20;C08F290/06;C08L83/05;C08L83/07 |
主分类号 |
C08G77/20 |
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